Prof. Wenxin Liu

Operation and Control of Inverter-Interfaced Microgrids

Prof. Wenxin Liu, PhD

Lehigh University


September 20th, 2017



Power electronics based microgrids have advantages in terms of flexibility, reliability, and power density. However, such microgrids are hard to control due to reduced inertia, increased uncertainties, and wide range of operating conditions. In such systems, the strong physical couplings among subsystems (inverter-interfaced distributed generators) must be properly considered. Simply introducing existing control solutions in large-scale power systems and unmanned vehicles cannot provide expected performance. To fully unlock potentials of such systems, novel control solutions that are fast and accurate need to be developed. Related studies are important for both civilian smart grid and the high-performance military power systems. During Dr. Liu’s talk, he will introduce his recent work on upper-level microgrid operation, current work on lower-level AC/DC microgrids controls, and the advanced cyber-physical energy system test-bed that his group developed with fundamental components. One will see that there are significant opportunity with the cross-disciplinary research on microgrids. 



Dr. Wenxin Liu received the B.S. and M.S. degrees in Controls from Northeastern University, China in 1996 and 2000, respectively, and the Ph.D. degree in Electrical Engineering from the Missouri University of Science and Technology. From 2005 to 2009, he was an Assistant Scholar Scientist with the Center for Advanced Power Systems at Florida State University. He was an Assistant Professor with the Klipsch School of Electrical and Computer Engineering at New Mexico State University between 2009 and 2014. Currently, he is an Assistant Professor with the Department of Electrical and Computer Engineering at Lehigh University. He has published more than 50 papers in peer-reviewed journals/transactions and received over $2 million research funding from the U.S. National Science Foundation, Department of Defense, Department of Energy, etc. He was named ConocoPhillips Faculty Fellow in 2011, received the Dean's Recognition Award in 2012, received the Early Career Award in 2013, and awarded the P.C. Rossin professorship in 2016. He is currently an Editor for IEEE Transactions on Smart Grid and an Associate Editor for IEEE Transactions on Industrial Informatics.




PhD. Rooberto Rojas


Some Problems in Free-Space Optical and Power-Grid Data Communications

Prof. Roberto Rojas-Cessa, PhD

Department of Electrical and Computer Engineering, New Jersey Institute of Technology (NJIT)


Thursday September 21st , 2017



Free-space optical (FSO) communications can be applied to a very wide set of environments and applications; from Internet-of-things (IoT) to deep-space communications. FSO comprises a variety of light sources. Here we focus on laser light. Some major properties of FSO are directionality and high-data rates, and an unlicensed range of the spectrum. In this talk, we discuss our ongoing of research on FSO communications for high-speed trains (HSTs). Although HSTs travel at a very high speed, their marked and known traveling paths simplifies considerations for the adoption of directional communications. Still, many challenges remain. Directional communications may achieve higher data rates than radio-based technologies. FSO is then attractive to achieve data rates to satisfy different data applications, such as video streaming applications, used by a large number of commuters. Furthermore, as control of distribution of electrical power in such application is also needed, we also discuss an emerging approach to the power grids, the controllable-delivery power grid. This approach may potentially control power delivery in a finer manner than the present grid. 



 Roberto Rojas-Cessa received a B.S. degree from Universidad Veracruzana, Mexico, an M.S. degree from Centro de Investigacion y Estudios Avanzados (CINVESTAV), Mexico, and a Ph.D. degree in Electrical Engineering from New York University Tandon School of Engineering, (formerly Polytechnic University), Brooklyn, NY. Currently, he is a Professor in the Department of Electrical and Computer Engineering, New Jersey Institute of Technology (NJIT). His research interests are in the wide area of computer networks. He was an Invited Fellow of the Japanese Society for the Advancement of Science in 2009. He authored the books “Advanced Internet Protocols, Services, and Applications,” Wiley and Sons, 2012 and “Interconnections for Computer Communications and Packet Networks,” CRC Press, 2017. He serves in different capacities for IEEE conferences and journals, and as a panelist for U.S. National Science Foundation and U.S. Department of Energy. He is the recipient of the Excellence in Teaching Award 2013 from the Newark College of Engineering at NJIT, and a recipient of New Jersey Inventors Hall of Fame - Innovators Award in same year. He is currently a senior member of IEEE.


Dr. Julio Cesar Tinoco

Impact on Gate Extrinsic Capacitances in the RF/Analogical Performance of triple-gate FinFET transistors

Prof. Julio César Tinoco Magaña, PhD

Centro de Investigación en Micro y Nanotecnología

Universidad Veracruzana


Friday September 22nd, 2017



 The CMOS technology has progressed amazingly during the last decades. This evolution has been driven by the successful shrinkage of transistor dimensions, described along the years by Moore´s Law. Besides, the projections developed by the International Technology Roadmap of Semiconductors (ITRS), indicate that such progress will continue next decade towards the 10-nm node. However, in the last years new requirements on the electronic systems have stimulated the development of novel non-digital functionalities in order to satisfy new user demands. Under this new conception, the microelectronics industry will develop a functional diversification through semiconductor-based devices like analog/RF, passive, high-voltage or sensors and actuator devices. Therefore, there is a new concept of the semiconductor roadmap with two well-distinguished trends: (i) To continue the miniaturization, called as More-Moore (MM), which is associated to digital systems like microprocessors, data storage and processing, etc and (ii) Functional diversification, called as More-than-Moore (MtM), which is associated to different kind of interaction between the outside world and the digital systems like transducers, power subsystems, analog signal processing, mixed-mode subsystems, etc.

In this regard, new opportunity areas have been appearing, one of them is the communications industry, which requires very high frequency, low power consumption, high performance, analog and digital subsystems etc. Hence, communications industry becomes a good example of the MM and MtM sharing and industry diversification. Therefore, the improvement of the RF transistors performance becomes of first importance with the aim of develop complex System-on-Chip (SoC) products.

On the other hand, Silicon-on-Insulator Triple-Gate FinFETs have attracted the attention due to their high immunity to the so-called Short-Channel-Effecs (SCE). For this reason, they are considered as candidates to pursue the CMOS development through 10 nm channel length as well as to continue the roadmap of analog applications. However, due to their tridimensional nature, very high extrinsic gate capacitances (Cgge) have been experimentally observed, which strongly degrades their Analog/RF performance. Therefore, several efforts have been performed in order to optimize the FinFET geometry, with the aim to improve of the transistor cut-off frequencies, due to parasitic gate capacitance reduction.



Julio C. Tinoco was born in Nezahualcóyotl City, Mexico, in 1976. He received the Communication and Electronics Engineer degree from the Escuela Superior de Ingeniería Mecánica y Eléctrica at National Polytechnic Institute (ESIME-IPN), Mexico City, Mexico, in 1999, and the Ph.D. degree in electrical engineering from the Solid-State Electronics Section from the Research and Advanced Studies Centre, National Polytechnic Institute (CINVESTAV-IPN), Mexico City, in 2004. He worked on fabrication and characterization of ultra-thin dielectric films for MOS transistor applications.  

In 2006, he was a Post-doctoral researcher in the Universitat Rovira I Virgili, Tarragona, Spain. He worked on modeling of strained-silicon transistors. In 2007–2008, he was a Post-doctoral researcher in the Microwave Laboratory of the Université catholique de Lovain (UCL), Louvan-la-Neuve, Belgium. He worked on modeling and characterization of triple-gate FinFETs. In 2009-2012, he was a Full Professor in the Engineering School of the National Autonomous University of Mexico (FI-UNAM), Mexico City. Since 2013, he is researcher from the Micro and Nanotechnology Research Centre from University of Veracruz, Veracruz, Mexico




Awaiting confirmation of the Keynote speakers, more information will be published in this page.

Important Dates


September  5-7, 2018 

Workshops/Tutorial Courses:

September  3-4, 2018

Full Manuscript:

June 1, 2018  

Review Notification:

Before July 6, 2018

Final Revised manuscript:

August  3, 2018